CY7C1481V25

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ...........................................................65°C to +150°C
Ambient Temperature wit
Power Applied.......................................................................55°C to +125°C
Supply Voltage on V_DD Relative to GND.................................... 0.3V to +3.6V
DC Voltage Applied to Outputs
in Tri-State..................................................................... 0.5V to V_DDQ + 0.5V
DC Input Voltage...............................................................0.5V to V_DD + 0.5V
Current into Outputs (LOW)................................................................... 20 mA
Static Discharge Voltage...................................................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current................................................................................. >200 mA

The CY7C1481V25/CY7C1483V25/CY7C1487V25 is a 2.5V, 2M x 36/4M x 18/1M x 72 Synchronous Flow-through SRAM designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BWx,
and BWE), and Global Write (GW). Asynchronous inputs of CY7C1481V25/CY7C1483V25/CY7C1487V25 include the Output Enable (OE) and the ZZ pin.

The CY7C1481V25/CY7C1483V25/CY7C1487V25 allows either interleaved or linear burst sequences, selected by the MODE input pin. A HIGH selects an interleaved burst sequence, while a LOW selects a linear burst sequence. Burst accesses can be initiated with the Processor Address Strobe (ADSP) or the cache Controller Address Strobe (ADSC) inputs. Address advancement is controlled by the Address Advancement (ADV) input.

Addresses and chip enables of CY7C1481V25/CY7C1483V25/CY7C1487V25 are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV).

The CY7C1481V25/CY7C1483V25/CY7C1487V25 operates from a +2.5V core power supply while all outputs may operate with either a +2.5 or +1.8V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.