CY7C1463AV33

Features: • No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles.• Can support up to 133-MHz bus operations with zero wait states - Data is transferred on every clock• Pin-compatible and functionally equivalent to ZBT™ device...

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CY7C1463AV33 Picture
SeekIC No. : 004320164 Detail

CY7C1463AV33: Features: • No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles.• Can support up to 133-MHz bus operations with zero wait states - Data ...

floor Price/Ceiling Price

Part Number:
CY7C1463AV33
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Features:

• No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles.
• Can support up to 133-MHz bus operations with zero wait states
   - Data is transferred on every clock
• Pin-compatible and functionally equivalent to ZBT™ devices
• Internally self-timed output buffer control to eliminate
the need to use OE
• Registered inputs for flow-through operation
• Byte Write capability
• 3.3V/2.5V I/O power supply
• Fast clock-to-output times
   - 6.5 ns (for 133-MHz device)
   - 8.5 ns (for 100-MHz device)
• Clock Enable (CEN) pin to enable clock and suspend operation
• Synchronous self-timed writes
• Asynchronous Output Enable
• CY7C1461AV33, CY7C1463AV33 available in JEDEC-standard lead-free 100-pin TQFP package, lead-free and non-lead-free 165-ball FBGA package. CY7C1465AV33 available in lead-free and non-lead-free 209-ball FBGA package
• Three chip enables for simple depth expansion
• Automatic Power-down feature available using ZZ mode or CE deselect
• JTAG boundary scan for FBGA packages
• Burst Capability-linear or interleaved burst order
• Low standby power



Pinout

  Connection Diagram


Specifications

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature .................................65°C to +150°C
Ambient Temperature with
Power Applied.............................................55°C to +125°C
Supply Voltage on VDD Relative to GND........ 0.5V to +4.6V
DC Voltage Applied to Outputs
in Tri-State........................................... 0.5V to VDDQ + 0.5V
DC Input Voltage....................................0.5V to VDD + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA



Description

The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a 3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1461AV33/CY7C1463AV33/ CY7C1465AV33 is equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions.

All synchronous inputs ofCY7C1461AV33/CY7C1463AV33/CY7C1465AV33  pass through input registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Maximum access delay from the clock rise is 6.5 ns (133-MHz device).

The operations of CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 are controlled by the two or four Byte Write Select (BWX) and a Write Enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry.

Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) of CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 provide for easy bank selection and output tri-state control. In order to avoid bus contention, the output drivers are synchronously tri-stated during the data portion of a write sequence.




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