DescriptionThe CY7C139-25JC is a high-speed BICMOS 4k*8 and 4k*9 dual-port static RAMs. The CY7C139-25JC's features can be summarized as (1)true dual-ported memory cells which allow simultaneous reads of the same memory location; (2)0.65 micron CMOS for optimum speed/power; (3)high-speed access: 1...
CY7C139-25JC: DescriptionThe CY7C139-25JC is a high-speed BICMOS 4k*8 and 4k*9 dual-port static RAMs. The CY7C139-25JC's features can be summarized as (1)true dual-ported memory cells which allow simultaneous rea...
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The CY7C139-25JC is a high-speed BICMOS 4k*8 and 4k*9 dual-port static RAMs. The CY7C139-25JC's features can be summarized as (1)true dual-ported memory cells which allow simultaneous reads of the same memory location; (2)0.65 micron CMOS for optimum speed/power; (3)high-speed access: 15ns; (4)low operating power: ICC=160mA; (5)fully asynchronous operation; (6)automatic power-down; (7)TTL compatible; (8)on-chip arbitration logic; (9)semaphores included to permit software handshaking between ports.
The absolute maximum ratings of the CY7C139-25JC are: (1)storage temperature: -65 to ±150; (2)ambient temperature with power applied: -55 to ±125; (3)supply voltage to ground potential: -0.5V to +7.0V; (4)DC voltage applied to outputs in high Z state: -0.5V to +7.0V; (5)DC input voltage: -0.5V to +7.0V.
The following is about the electrical characteristics of CY7C139-25JC: (1)output high voltage: 2.4V min at VCC=min, IOH=-4.0mA; (2)output low voltage: 0.4V max at VCC=min, IOH=16.0mA; (3)input high level: 2.2V min; (4)input low level: 0.8V max; (5)input load current: -10A min and +10A max at GNDVIVCC; (6)output leakage current: -10A min and +10A max at GNDVINVCC, output disabled; (7)operating current: 160mA max at VCC=max, IOUT=0mA, output disable; (8)standby current: 30mA max.