CY7C1380DV25

The CY7C1380DV25/CY7C1382DV25 SRAM integrates 512K x 36 and 1M x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs of CY7C1380DV25/CY7C1382DV25 are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depthexpansion Chip Enables (CE2 and CE3[2]), Burst Control inputs (ADSC, ADSP, andADV), Write Enables (BWX, and BWE), and Global Write (GW). Asynchronous inputs of CY7C1380DV25/CY7C1382DV25 include the Output Enable (OE) and the ZZ pin.

Addresses and chip CY7C1380DV25/CY7C1382DV25 enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV).

Address, data inputs, and write controls of CY7C1380DV25/CY7C1382DV25 are registered on-chip to initiate a self-timed Write cycle.This part supports Byte Write operations (see Pin Descriptions and Truth Table for further details). Write cycles CY7C1380DV25/CY7C1382DV25 can be one to two or four bytes wide as controlled by the byte write control inputs. GW when active LOW causes all bytes to be written.

The CY7C1380DV25/CY7C1382DV25 operates from a +2.5V core power supply while all outputs may operate with a +2.5 supply. All inputs and outputs are JEDEC-standard JESD8-5- compatible.