Position: Home  > All Categories> Integrated Circuits (ICs) > CY7C1380CV25

CY7C1380CV25

Features: •Fast clock speed: 250, 225, 200, 167 MHz•Provide high-performance 3-1-1-1 access rate•Fast OE access times: 2.6, 2.8, 3.0, 3.4 ns•Optimal for depth expansion•Single 2.5V ±5% power supply•Common data inputs and data outputs•Byte Write Enable and ...

product image

CY7C1380CV25 Picture
See larger image
SeekIC No. : 004320048 Detail

CY7C1380CV25: Features: •Fast clock speed: 250, 225, 200, 167 MHz•Provide high-performance 3-1-1-1 access rate•Fast OE access times: 2.6, 2.8, 3.0, 3.4 ns•Optimal for depth expansion•...

CY7C1380CV25 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
CY7C1380CV25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

•Fast clock speed: 250, 225, 200, 167 MHz
•Provide high-performance 3-1-1-1 access rate
•Fast OE access times: 2.6, 2.8, 3.0, 3.4 ns
•Optimal for depth expansion
•Single 2.5V ±5% power supply
•Common data inputs and data outputs
•Byte Write Enable and Global Write control
•Chip enable for address pipeline
•Address, data, and control registers
•Internally self-timed Write cycle
•Burst control pins (interleaved or linear burst sequence)
•Automatic power-down available using ZZ mode or CE deselect
•Available in 119-ball bump BGA, 165-ball FBGA and 100-pin TQFP packages
•JTAG boundary scan for BGA packaging version


Pinout

Connection Diagram


Specifications

(Above which the useful life may be impaired. For user guide-
lines, not tested.)
 Storage Temperature .................................55°C to +1500C
Ambient Temperature with
 Power Applied.............................................55°Cto +125°C
Supply Voltage on VDD
 Relative to GND.................................................0.3V to +3.6V
DC Voltage Applied to Outputs
in High Z State[11]..................................0.5V to VDDQ + 0.5V
DC Input Voltage[11]..............................0.5V to VDDQ + 0.5V
Current into Outputs (LOW).............................................20 mA


Description

The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS CY7C1380CV25 designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Test Equipment
TOP853
TOP2005
Integrated Circuits (ICs)
TA8435H
1MB12-140
Line Protection, Backups
BX0023
A20B-1008-0550
Cables, Wires
821-0814-a
415-0100-150
Connectors, Interconnects
ASP-134488-01
WM4078-ND
View more