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CY7C1380CV25

Features: •Fast clock speed: 250, 225, 200, 167 MHz•Provide high-performance 3-1-1-1 access rate•Fast OE access times: 2.6, 2.8, 3.0, 3.4 ns•Optimal for depth expansion•Single 2.5V ±5% power supply•Common data inputs and data outputs•Byte Write Enable and ...

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SeekIC No. : 004320048 Detail

CY7C1380CV25: Features: •Fast clock speed: 250, 225, 200, 167 MHz•Provide high-performance 3-1-1-1 access rate•Fast OE access times: 2.6, 2.8, 3.0, 3.4 ns•Optimal for depth expansion•...

CY7C1380CV25 Data Sheet

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Part Number:
CY7C1380CV25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•Fast clock speed: 250, 225, 200, 167 MHz
•Provide high-performance 3-1-1-1 access rate
•Fast OE access times: 2.6, 2.8, 3.0, 3.4 ns
•Optimal for depth expansion
•Single 2.5V ±5% power supply
•Common data inputs and data outputs
•Byte Write Enable and Global Write control
•Chip enable for address pipeline
•Address, data, and control registers
•Internally self-timed Write cycle
•Burst control pins (interleaved or linear burst sequence)
•Automatic power-down available using ZZ mode or CE deselect
•Available in 119-ball bump BGA, 165-ball FBGA and 100-pin TQFP packages
•JTAG boundary scan for BGA packaging version


Pinout

Connection Diagram


Specifications

(Above which the useful life may be impaired. For user guide-
lines, not tested.)
 Storage Temperature .................................55°C to +1500C
Ambient Temperature with
 Power Applied.............................................55°Cto +125°C
Supply Voltage on VDD
 Relative to GND.................................................0.3V to +3.6V
DC Voltage Applied to Outputs
in High Z State[11]..................................0.5V to VDDQ + 0.5V
DC Input Voltage[11]..............................0.5V to VDDQ + 0.5V
Current into Outputs (LOW).............................................20 mA


Description

The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS CY7C1380CV25 designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors.


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