CY7C1370DV25

Features: • Pin-compatible and functionally equivalent to ZBT™• Supports 250-MHz bus operations with zero wait states - Available speed grades are 250, 200 and 167 MHz• Internally self-timed output buffer control to eliminate the need to use asynchronous OE• Fully reg...

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SeekIC No. : 004320027 Detail

CY7C1370DV25: Features: • Pin-compatible and functionally equivalent to ZBT™• Supports 250-MHz bus operations with zero wait states - Available speed grades are 250, 200 and 167 MHz• Inter...

floor Price/Ceiling Price

Part Number:
CY7C1370DV25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Pin-compatible and functionally equivalent to ZBT™
• Supports 250-MHz bus operations with zero wait states
   - Available speed grades are 250, 200 and 167 MHz
• Internally self-timed output buffer control to eliminate the need to use asynchronous OE
• Fully registered (inputs and outputs) for pipelined operation
• Byte Write capability
• Single 2.5V core power supply
• 2.5V I/O power supply
• Fast clock-to-output times
   - 2.6 ns (for 250-MHz device)
   - 3.0 ns (for 200-MHz device)
   - 3.4 ns (for 167-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Available in JEDEC-standard lead-free 100-pin TQFP,lead-free and non-lead-free 119-ball BGA and 165-ball FBGA packages
• IEEE 1149.1 JTAG Boundary Scan
• Burst capability-linear or interleaved burst order
• "ZZ" Sleep Mode option and Stop Clock option




Pinout

  Connection Diagram


Specifications

(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature ............................65°C to +150°C
Ambient Temperature with
Power Applied........................................55°C to +125°C
Supply Voltage on VDD Relative to GND....... 0.5V to +3.6V
DC to Outputs in Tri-State ................ 0.5V to VDDQ + 0.5V
DC Input Voltage..................................0.5V to VDD + 0.5V
Current into Outputs (LOW)....................................... 20 mA
Static Discharge Voltage......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current................................................... > 200 mA



Description

The CY7C1370DV25 and CY7C1372DV25 are 2.5V, 512K x 36 and 1 Mbit x 18 Synchronous pipelined burst SRAMs with
No Bus Latency™ (NoBL™) logic, respectively. They are designed to support unlimited true back-to-back Read/Write operations with no wait states. The CY7C1370DV25 and CY7C1372DV25 are equipped with the advanced (NoBL) logic
required to enable consecutive Read/Write operations with data being transferred on every clock cycle. CY7C1370DV25 and CY7C1372DV25 feature dramatically improves the throughput of data in systems that require frequent Write/Read transitions. The CY7C1370DV25 and CY7C1372DV25 are pin-compatible and functionally equivalent to ZBT devices.

All synchronous inputs of CY7C1370DV25 and CY7C1372DV25 pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. The clock input of CY7C1370DV25 and CY7C1372DV25 is qualified by the Clock Enable (CEN) signal,which when deasserted suspends operation and extends the previous clock cycle.

Write operations of CY7C1370DV25 and CY7C1372DV25 are controlled by the Byte Write Selects (BWaBWd for CY7C1370DV25 and BWaBWb for CY7C1372DV25) and a Write Enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry.

Three synchronous Chip Enables CY7C1370DV25 and CY7C1372DV25 (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. In order to avoid bus contention, the output drivers are synchronously three-stated during the data portion of a write sequence.




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