CY7C1329

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature .................................................................................. −65°C to +150°C
Ambient Temperature with Power Applied.................................................... −55°C to +125°C
Supply Voltage on V_DD Relative to GND.............................................................−0.5V to +4.6V
DC Voltage Applied to Outputs in High Z State^[7] ..................................−0.5V to VDDQ + 0.5V
DC Input Voltage^[7]................................................................................−0.5V to VDDQ + 0.5V
Current into Outputs (LOW)............................................................................................ 20 mA
Static Discharge Voltage .......................................... >2001V (per MIL-STD-883, Method 3015)
Latch-Up Current......................................................................................................... >200 mA

The CY7C1329 is a 3.3V, 64K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary cache with minimal glue logic.

All synchronous inputs of CY7C1329 pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise is 4.2 ns (133-MHz device).

The CY7C1329 supports either the interleaved burst sequence used by the Intel Pentium processor or a linear burst sequence used by processors such as the PowerPC. The burst sequence is selected through the MODE pin. Accesses CY7C1329 can be initiated by asserting either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC) at clock rise. Address advancement through the burst sequence is controlled by theADV input. A 2-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access.

Byte write operations of CY7C1329 are qualified with the four Byte Write Select (BW_[3:0]) inputs. A Global Write Enable (GW) overrides all byte write inputs and writes data to all four bytes. All writes are conducted with on-chip synchronous self-timed write circuitry.

Three synchronous Chip Selects CY7C1329 (CE₁, CE₂, CE₃) and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. In order to provide proper data during depth expansion, OE CY7C1329 is masked during the first clock of a read cycle when emerging from a deselected state.