CY7C1325

Features: • Supports 117-MHz microprocessor cache systems with zero wait states• 256K by 18 common I/O• Fast clock-to-output times -7.5 ns (117-MHz version)• Two-bit wrap-around counter supporting either interleaved or linear burst sequence• Separate processor and con...

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CY7C1325 Picture
SeekIC No. : 004319928 Detail

CY7C1325: Features: • Supports 117-MHz microprocessor cache systems with zero wait states• 256K by 18 common I/O• Fast clock-to-output times -7.5 ns (117-MHz version)• Two-bit wrap-aro...

floor Price/Ceiling Price

Part Number:
CY7C1325
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Supports 117-MHz microprocessor cache systems with zero wait states
• 256K by 18 common I/O
• Fast clock-to-output times
   -7.5 ns (117-MHz version)
• Two-bit wrap-around counter supporting either interleaved or linear burst sequence
• Separate processor and controller address strobes provides direct interface with the processor and external cache controller
• Synchronous self-timed write
• Asynchronous output enable
• I/Os capable of 2.53.3V operation
• JEDEC-standard pinout
• 100-pin TQFP packaging
• ZZ "sleep" mode



Pinout

  Connection Diagram


Specifications

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ...............................65°C to +150°C
Ambient Temperature with
Power Applied...........................................55°C to +125°C
Supply Voltage on VDD Relative to GND...........0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[5]....................................0.5V to VDD + 0.5V
DC Input Voltage[5]................................0.5V to VDD + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage ..........................................  >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current....................................................   >200 mA



Description

The CY7C1325 is a 3.3V, 256K by 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 7.5 ns (117-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access.

The CY7C1325 allows both an interleaved or linear burst sequences, selected by the MODE input pin. A HIGH selects an interleaved burst sequence, while a LOW selects a linear burst sequence. Burst accesses of CY7C1325 can be initiated with the Processor Address Strobe (ADSP) or the Cache Controller Address Strobe (ADSC) inputs. Address advancement is controlled by the Address Advancement (ADV) input.

A synchronous self-timed write mechanism CY7C1325 is provided to simplify the write interface. A synchronous chip enable input and an asynchronous output enable input provide easy control for bank selection and output three-state control.




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