CY7C1304V25

Features: • Separate Independent Read and Write Data Ports -Supports concurrent transactions• 167 MHz Clock for High Bandwidth -2.5 ns Clock-to-Valid access time• 4-Word Burst for reducing address bus frequency• Double Data Rate (DDR) interfaces on both Read & Write Por...

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SeekIC No. : 004319876 Detail

CY7C1304V25: Features: • Separate Independent Read and Write Data Ports -Supports concurrent transactions• 167 MHz Clock for High Bandwidth -2.5 ns Clock-to-Valid access time• 4-Word Burst for ...

floor Price/Ceiling Price

Part Number:
CY7C1304V25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Separate Independent Read and Write Data Ports
   -Supports concurrent transactions
• 167 MHz Clock for High Bandwidth
   -2.5 ns Clock-to-Valid access time
• 4-Word Burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces on both Read & Write Ports (data transferred at 333 MHz) @167 MHz
• Two input clocks (K and K) for precise DDR timing
   -SRAM uses rising edges only
• Two output clocks (C and C) accounts for clock skew and flight time mis-matches
• Single multiplexed address input bus latches address inputs for both READ and WRITE ports
• Separate Port Selects for depth expansion
• Synchronous internally self-timed writes
• 2.5V core power supply with HSTL Inputs and Outputs
• 13x15 mm 1.0 mm pitch fBGA package, 165 ball (11x15 matrix)
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V-1.9V)
• JTAG Interface



Specifications

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature .................................65C to +150C
Ambient Temperature with
Power Applied.............................................55C to +125C
Supply Voltage on VDD Relative to GND..... 0.5V to +3.6V
DC Voltage Applied to Outputs
in High Z State[14] ...........................0.5V to VDDQ + 0.5V
DC Input Voltage[14] .......................0.5V to VDDQ + 0.5V
Current into Outputs (LOW)..................................... 20 mA
Static Discharge Voltage ........................................>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current................................................. >200 mA



Description

The CY7C1304V25 is a 2.5V Synchronous Pipelined SRAM equipped with QDR architecture. QDR architecture consists of two separate ports to access the memory array. The Read port has dedicated Data Outputs to support Read operations and the Write Port has dedicated Data Inputs to support Write operations.

QDR architecture has separate data inputs and data outputs to completely eliminate the need to "turn-around" the data bus required with common I/O devices. Access to each port is accomplished through a common address bus. Addresses for Read and Write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the CY7C1304V25 Read and Write ports are completely independent of one another. In order to maximize data throughput, both Read and Write ports are equipped with Double Data Rate (DDR) interfaces. Each address location of CY7C1304V25 is associated with 4 18-bit words that burst sequentially into or out of CY7C1304V25. Since data can be transferred into and out of the device on every rising edge of both input clocks (K/K and C/C) memory bandwidth is maximized while simplifying system design by eliminating bus "turn-arounds".

Depth expansion of CY7C1304V25 is accomplished with Port Selects for each port. Port selects allow each port to operate independently. All synchronous inputs pass through input registers controlled by theK orK input clocks. All data outputs pass through output registers CY7C1304V25 controlled by the C or C input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.




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