CY7C1304DV25

Features: • Separate independent Read and Write data ports - Supports concurrent transactions• 167-MHz Clock for high bandwidth - 2.5 ns Clock-to-Valid access time• 4-Word Burst for reducing the address bus frequency• Double Data Rate (DDR) interfaces on both Read and Write...

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SeekIC No. : 004319875 Detail

CY7C1304DV25: Features: • Separate independent Read and Write data ports - Supports concurrent transactions• 167-MHz Clock for high bandwidth - 2.5 ns Clock-to-Valid access time• 4-Word Burst fo...

floor Price/Ceiling Price

Part Number:
CY7C1304DV25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Separate independent Read and Write data ports
   - Supports concurrent transactions
• 167-MHz Clock for high bandwidth
   - 2.5 ns Clock-to-Valid access time
• 4-Word Burst for reducing the address bus frequency
• Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 333 MHz) @167 MHz
• Two input clocks (K and K) for precise DDR timing
   - SRAM uses rising edges only
• Two output clocks (C and C) account for clock skew and flight time mismatching
• Single multiplexed address input bus latches address inputs for both Read and Write ports
• Separate Port Selects for depth expansion
• Synchronous internally self-timed writes
• 2.5V core power supply with HSTL Inputs and Outputs
• 13 x 15 x 1.4 mm 1.0-mm pitch fBGA package, 165-ball (11x15 matrix)
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V1.9V)
• JTAG 1149.1 compatible test access port



Specifications

(Above which the useful life may be impaired.)
Storage Temperature ............................. 65°C to +150°C
Ambient Temperature with
Power Applied..........................................55°C to +125°C
Supply Voltage on VDD
Relative to GND............................................. 0.5V to +3.6V
DC Voltage Applied to Outputs
in High Z State ................................... 0.5V to VDDQ + 0.5V
DC Input Voltage[11]...........................0.5V to VDDQ + 0.5V
Current into Outputs (LOW)........................................ 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current................................................... > 200 mA



Description

The CY7C1304DV25 is a 2.5V Synchronous Pipelined SRAM equipped with QDR™ architecture. QDR architecture consists of two separate ports to access the memory array. The Read port has dedicated Data Outputs to support Read operations and the Write port has dedicated Data Inputs to support Write operations. QDR architecture has separate data inputs and data outputs to completely eliminate the need to "turn-around" the data bus required with common I/O devices. Access to each port is accomplished through a common address bus.Addresses for Read and Write addresses are latched on alternate rising edges of the input (K) clock. Accesses to CY7C1304DV25 Read and Write ports are completely independent of one another. In order to maximize data throughput, both Read and Write ports are equipped with Double Data Rate (DDR) interfaces. Each address location is associated with four 18-bit words. Since data can be transferred into and out of CY7C1304DV25 on every rising edge of both input clock (K/K and C/C) memory bandwidth is maximized while simplifying system design by eliminating bus "turn-arounds."

Depth expansion of CY7C1304DV25 is accomplished with Port Selects for each port. Port selects allow each port to operate independently.

All synchronous inputs of CY7C1304DV25 pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry




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