CY7C1302DV25

Features: • Separate independent Read and Write data ports - Supports concurrent transactions• 167-MHz clock for high bandwidth - 2.5 ns clock-to-Valid access time• 2-word burst on all accesses• Double Data Rate (DDR) interfaces on both Read and Write ports (data transferre...

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SeekIC No. : 004319867 Detail

CY7C1302DV25: Features: • Separate independent Read and Write data ports - Supports concurrent transactions• 167-MHz clock for high bandwidth - 2.5 ns clock-to-Valid access time• 2-word burst on...

floor Price/Ceiling Price

Part Number:
CY7C1302DV25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Separate independent Read and Write data ports
   - Supports concurrent transactions
• 167-MHz clock for high bandwidth
   - 2.5 ns clock-to-Valid access time
• 2-word burst on all accesses
• Double Data Rate (DDR) interfaces on both Read and Write ports (data transferred at 333 MHz) @ 167 MHz
• Two input clocks (K and K) for precise DDR timing
   - SRAM uses rising edges only
• Two output clocks (C and C) account for clock skew and flight time mismatching
• Single multiplexed address input bus latches address inputs for both Read and Write ports
• Separate Port Selects for depth expansion
• Synchronous internally self-timed writes
• 2.5V core power supply with HSTL Inputs and Outputs
• 13 x 15 x 1.4 mm 1.0-mm pitch fBGA package, 165 ball (11 x 15 matrix)
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V1.9V)
• JTAG Interface



Specifications

(Above which the useful life may be impaired.)
Storage Temperature ............................65°C to +150°C
Ambient Temperature with
Power Applied.........................................55°C to +125°C
Supply Voltage on VDD Relative to GND........ 0.5V to +3.6V
DC Applied to Outputs in High-Z......... 0.5V to VDDQ + 0.5V
DC Input Voltage[9 ............................ 0.5V to VDDQ + 0.5V
Current into Outputs (LOW) ........................................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA



Description

The CY7C1302DV25 is a 2.5V Synchronous Pipelined SRAM equipped with QDR™ architecture. QDR architecture consists of two separate ports to access the memory array. The Read port has dedicated data outputs to support Read operations and the Write Port has dedicated data inputs to support Write operations. Access to each port is accomplished through a common address bus. The Read address of CY7C1302DV25 is latched on the rising edge of the K clock and the Write address is latched on the rising edge of K clock. QDR has separate data inputs and data outputs to completely eliminate the need to "turn-around" the data bus required with common I/O devices. Accesses to the CY7C1302DV25 Read and Write ports are completely independent of one another. All accesses of CY7C1302DV25 are initiated synchronously on the rising edge of the positive input clock (K). In order to maximize data throughput, both Read and
Write ports are equipped with DDR interfaces. Therefore, data can be transferred into the device on every rising edge of both input clocks (K and K) and out of the device on every rising edge of the output clock (C and C, or K and K in a single clock domain) thereby maximizing performance while simplifying system design. Each address location is associated with two 18-bit words that burst sequentially into or out of the device.

Depth expansion of CY7C1302DV25 is accomplished with a Port Select input for each port. Each Port Select allows each port to operate independently. 38-05625

All synchronous inputs of CY7C1302DV25 pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.




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