CY7C128A-25VC

Features: • Automatic power-down when deselected• CMOS for optimum speed/power• High speed-15 ns• Low active power-440 mW (commercial)-550 mW (military)• Low standby power-110 mW• TTL-compatible inputs and outputs• Capable of withstanding greater than 2001...

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CY7C128A-25VC Picture
SeekIC No. : 004319856 Detail

CY7C128A-25VC: Features: • Automatic power-down when deselected• CMOS for optimum speed/power• High speed-15 ns• Low active power-440 mW (commercial)-550 mW (military)• Low standby po...

floor Price/Ceiling Price

Part Number:
CY7C128A-25VC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Automatic power-down when deselected
• CMOS for optimum speed/power
• High speed
-15 ns
• Low active power
-440 mW (commercial)
-550 mW (military)
• Low standby power
-110 mW
• TTL-compatible inputs and outputs
• Capable of withstanding greater than 2001V electrostatic discharge
• VIH of 2.2V



Pinout

  Connection Diagram


Specifications

(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature ................................. 65°C to +150°C
Ambient Temperature with
Power Applied............................................. 55°C to +125°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14) ........................................... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State ............................................... 0.5V to +7.0V
DC Input Voltage............................................ 3.0V to +7.0V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA



Description

The CY7C128A is a high-performance CMOS static RAM organized as 2048 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE), and active LOW output enable (OE) and three-state drivers. The CY7C128A has an automatic power-down feature, reducing the power consumption by 83% when deselected.

Writing to CY7C128A-25VC is accomplished when the chip enable (CE) and write enable (WE) inputs are both LOW.

Data on the eight I/O pins (I/O0 through I/O7) is written into the memory location specified on the address pins (A0 through A10).

Reading CY7C128A-25VC is accomplished by taking chip enable (CE) and output enable (OE) LOW while write enable (WE) remains HIGH. Under these conditions, the contents of the memory location specified on the address pins will appear on the eight I/O pins. The I/O pins remain in high-impedance state when chip enable (CE) or output enable (OE) is HIGH or write enable (WE) is LOW.

The CY7C128A utilizes a die coat to insure alpha immunity.




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