CY7C1219F

Features: • Registered inputs and outputs for pipelined operation• Optimal for performance (Double-Cycle deselect) - Depth expansion without wait state• 32K * 36-bit common I/O architecture• 3.3V 5% and +10% core power supply (VDD)• 3.3V I/O supply (VDDQ)• Fast ...

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CY7C1219F Picture
SeekIC No. : 004319843 Detail

CY7C1219F: Features: • Registered inputs and outputs for pipelined operation• Optimal for performance (Double-Cycle deselect) - Depth expansion without wait state• 32K * 36-bit common I/O arc...

floor Price/Ceiling Price

Part Number:
CY7C1219F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Registered inputs and outputs for pipelined operation
• Optimal for performance (Double-Cycle deselect)
  - Depth expansion without wait state
• 32K * 36-bit common I/O architecture
• 3.3V 5% and +10% core power supply (VDD)
• 3.3V I/O supply (VDDQ)
• Fast clock-to-output times
  - 3.5 ns (for 166-MHz device)
  - 4.0 ns (for 133-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel ®Pentium ® interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous Output Enable
• JEDEC-standard 100-pin TQFP package and pinout
• "ZZ" Sleep Mode option



Pinout

  Connection Diagram


Specifications

Storage Temperature .................................... 65°C to +150°
Ambient Temperature with
Power Applied.............................................55°C to +125°C
Supply Voltage on VDD Relative to GND........ 0.5V to +4.6V
DC Voltage Applied to Outputs
in three-state ....................................... 0.5V to VDDQ +0.5V
DC Input Voltage......................................0.5V to VDD+0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage...........................................> 2001V
(per MIL-STD-883,Method 3015)
Latch -up Current....................................................> 200 mA




Description

The CY7C1219F SRAM integrates 32,768 x 36 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs CY7C1219F(ADSC, ADSP, and ADV), Write Enables (BW[A:D], and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin.

Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV).

Address, data inputs, and write controls are registered on-chip to initiate a self-timed Write cycle.This part supports Byte Write operations (see Pin Descriptions and Truth Table for further details). Write cycles can be one to four bytes wide as controlled by the byte write control inputs. GW active LOW causes all bytes to be written. This device incorporates an additional pipelined enable register which delays turning off the output buffers an additional cycle when a deselect is executed.This feature allows depth expansion without penalizing system performance.

The CY7C1219F operates from a +3.3V core power supply while all outputs operate with a +3.3V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.




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