Features: • 32K x 36 common I/O• 3.3V 5% and +10% core power supply (VDD)• 3.3V I/O supply (VDDQ)• Fast clock-to-output times - 7.5 ns (117-MHz version) - 8.0 ns (100-MHz version)• Provide high-performance 2-1-1-1 access rate• User-selectable burst counter suppo...
CY7C1217F: Features: • 32K x 36 common I/O• 3.3V 5% and +10% core power supply (VDD)• 3.3V I/O supply (VDDQ)• Fast clock-to-output times - 7.5 ns (117-MHz version) - 8.0 ns (100-MHz ver...
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The CY7C1217F is a 32,768 x 36 synchronous cache RAM designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is 7.5 ns (117-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs of CY7C1217F include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BW[A:D], and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin.
The CY7C1217F allows either interleaved or linear burst sequences, selected by the MODE input pin. A HIGH selects an interleaved burst sequence, while a LOW selects a linear burst sequence. Burst accesses can be initiated with the
Processor Address Strobe (ADSP) or the cache Controller Address Strobe (ADSC) inputs. Address advancement is controlled by the Address Advancement (ADV) input.
Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV).
The CY7C1217F operates from a +3.3V core power supply while all outputs may operate with a +3.3V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.