DescriptionThe CY7C109-25ZI is one of the CY7C109 series.The CY7C109 / CY7C1009 is a high-performance CMOS stat-ic RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1),an active HIGH Chip Enable (CE2), an active LOW Output Enable (OE), and ...
CY7C109-25ZI: DescriptionThe CY7C109-25ZI is one of the CY7C109 series.The CY7C109 / CY7C1009 is a high-performance CMOS stat-ic RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an a...
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The CY7C109-25ZI is one of the CY7C109 series.The CY7C109 / CY7C1009 is a high-performance CMOS stat-ic RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1),an active HIGH Chip Enable (CE2), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is ac-complished by taking Chip Enable One (CE1) and Write Enable (WE) inputs LOW and Chip Enable Two (CE2) input HIGH.Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16).
Features of the CY7C109-25ZI are:(1) High speed:tAA = 10 ns ; (2) Low active power:1017 mW (max., 12 ns); (3) Low CMOS standby power:55 mW (max.), 4 mW (Low-power version); (4) 2.0V Data Retention (Low-power version); (5) Automatic power-down when deselected; (6) TTL-compatible inputs and outputs; (7) Easy memory expansion with CE1, CE2, and OE options.
The absolute maximum ratings of the CY7C109-25ZI can be summarized as:(1)Storage Temperature:65°C to +150°C; (2)Ambient Temperature withPower Applied: 55°C to +125°C; (3)Supply Voltage on VCC to Relative GND[1]:0.5V to +7.0V; (4)DC Voltage Applied to Outputs in High Z State[1]:0.5V to VCC + 0.5V; (5)DC Input Voltage[1]:0.5V to VCC + 0.5V; (6)Current into Outputs (LOW):20 mA.If you want to know more information such as the electrical characteristics, please download the datasheet in www.seekic.com or www.chinaicmart.com.