CY7C107B

• High speed
    -t_AA = 12 ns
• CMOS for optimum speed/power
• Automatic power-down when deselected
• TTL-compatible inputs and outputs

The CY7C107B and CY7C1007B are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected.

Writing to CY7C107B is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).

Reading from CY7C107B is accomplished by taking Chip Enable (CE) LOW while Write Enable (WE) remains HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the data output (D_OUT) pin.

The output pin (D_OUT) is placed in a high-impedance state when CY7C107B is deselected (CE HIGH) or during a write operation (CE and WE LOW). The CY7C107B is available in a standard 400-mil-wide SOJ; the CY7C1007B is available in a standard 300-mil-wide SOJ.