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CY7C106B

Features: * High speed -t(AA) =12 ns * CMOS for optimum speed/power* Low active power -495 mW* Low standby power -275 mW* 2.0V data retention (optional) -100 W* Automatic power-down when deselected* TTL-compatible inputs and outputsSpecificationsStorage Temperature ..................................

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CY7C106B: Features: * High speed -t(AA) =12 ns * CMOS for optimum speed/power* Low active power -495 mW* Low standby power -275 mW* 2.0V data retention (optional) -100 W* Automatic power-down when deselected...

CY7C106B Data Sheet

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Part Number:
CY7C106B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

* High speed
   -t(AA) =12 ns  
* CMOS for optimum speed/power
* Low active power
   -495 mW
* Low standby power
   -275 mW
* 2.0V data retention (optional)
   -100 W
* Automatic power-down when deselected
* TTL-compatible inputs and outputs


Specifications

Storage Temperature .................................65°C to +150°C
Ambient Temperature with
Power Applied.............................................55°C to +125°C
Supply Voltage on V(CC)  Relative to GND[1] ....0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1]....................................0.5V to V(CC)   + 0.5V
DC Input Voltage .................................0.5V to V(CC)   + 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage ..........................................>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.....................................................>200 mA




Description

The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits.
Easy memory expansion is provided by an active LOW Chip


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