Features: • High speed - tAA = 8, 10, 12 ns• Low active power - 1080 mW (max.)• Operating voltages of 3.3 ± 0.3V• 2.0V data retention• Automatic power-down when deselected• TTL-compatible inputs and outputsPinoutSpecifications(Above which the useful life may be ...
CY7C1069BV33: Features: • High speed - tAA = 8, 10, 12 ns• Low active power - 1080 mW (max.)• Operating voltages of 3.3 ± 0.3V• 2.0V data retention• Automatic power-down when deselec...
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The CY7C1069BV33 is a high-performance CMOS Static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished by enabling the chip (by taking CE LOW) and Write Enable (WE) inputs LOW.
Reading from CY7C1069BV33 is accomplished by enabling the chip (CE LOW) as well as forcing the Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. See the truth table at the back of this data sheet for a complete description of Read and Write modes.
The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when CY7C1069BV33 is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a Write operation (CE LOW and WE LOW).
The CY7C1069BV33 is available in a 54-pin TSOP II package with center power and ground (revolutionary) pinout.