CY7C1061DV33-10ZSXI

SRAM 1Mx16 CPG Fast Async

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SeekIC No. : 00470978 Detail

CY7C1061DV33-10ZSXI: SRAM 1Mx16 CPG Fast Async

floor Price/Ceiling Price

US $ 16.64~23.76 / Piece | Get Latest Price
Part Number:
CY7C1061DV33-10ZSXI
Mfg:
Cypress Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $23.76
  • $19.01
  • $17.81
  • $16.64
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/9/16

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Product Details

Quick Details

Memory Size : 16 Mbit Organization : 1 M x 16
Access Time : 10 ns Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 3 V Maximum Operating Current : 25 mA
Maximum Operating Temperature : + 85 C Minimum Operating Temperature : - 40 C
Mounting Style : SMD/SMT Package / Case : TSOP-54
Packaging : Tray    

Description

Packaging : Tray
Mounting Style : SMD/SMT
Access Time : 10 ns
Supply Voltage - Max : 3.6 V
Maximum Operating Current : 25 mA
Maximum Operating Temperature : + 85 C
Minimum Operating Temperature : - 40 C
Supply Voltage - Min : 3 V
Memory Size : 16 Mbit
Organization : 1 M x 16
Package / Case : TSOP-54


Pinout

  Connection Diagram


Description

The CY7C1061DV33-10ZSXI is a type of 16-Mbit (1M x 16) static RAM,which is organized as 1,048,576 words by 16 b its.To write to the device, take chip enables (CE1 LOW and CE2 HIGH) and write enable (WE) input low. If byte low enable(BLE) is LOW, then data from IO pins (IO0 through IO7), is written into the location specified on the address pins (A0 through A19).If byte high enable (BHE) is low, then data from IO pins (IO8 through IO15)of CY7C1061DV33-10ZSXI  is written into the location specified on the address pins (A0 through A19).

Features of the CY7C1061DV33-10ZSXI are:(1) high speed:tAA = 10 ns; (2) low active power: ICC = 175 mA at 10 n s; (3) low CMOS standby power:ISB2 = 25 mA; (4) operating voltages of 3.3 ± 0.3V; (5) 2.0V data retention; (6) aut omatic power down when deselected; (7) TTL compatible inputs and outputs; (8) easy memory expansion with CE1 and CE2 features; (9) available in Pb-free 54-Pin TSOP II and 48-Ball VFBGA packages.

The absolute maximum ratings of the CY7C1061DV33-10ZSXI can be summarized as:(1):storage temperature range s from65°C to +150°C;(2):ambient temperature with power applied is55°C to +125°C;(3):supply voltage on VDD relative to GND is0.5V to +4.6V;(4):DC voltage applied to outputs in high Z state is0.5V to Vcc+ 0.5V;(5):DC input Z state is0.5V to Vcc + 0.5V;(6):current into outputs (LOW)is 20 mA;(7):static discharge voltage(MIL-STD-88 3, method 3015)is greater than 2001V;(8):latch up current is greater than 200 mA.




Parameters:

Technical/Catalog InformationCY7C1061DV33-10ZSXI
VendorCypress Semiconductor Corp
CategoryIntegrated Circuits (ICs)
Memory TypeSRAM - Asynchronous
Memory Size16M (1M x 16)
Speed10ns
InterfaceParallel
Package / Case54-TSOP II
PackagingTube
Voltage - Supply3 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryRAM
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names CY7C1061DV33 10ZSXI
CY7C1061DV3310ZSXI
428 2960 5 ND
42829605ND
428-2960-5



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