Features: • High speed -tAA = 15 ns• Low active power -504 mW (max.)• Low CMOS standby power (Commercial L version) -1.8 mW (max.)• 2.0V Data Retention (660 µW at 2.0V retention)• Automatic power-down when deselected• TTL-compatible inputs and outputs̶...
CY7C1049V33: Features: • High speed -tAA = 15 ns• Low active power -504 mW (max.)• Low CMOS standby power (Commercial L version) -1.8 mW (max.)• 2.0V Data Retention (660 µW at 2.0V ...
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The CY7C1049V33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Easy memory expansion provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing tothe device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18).
Reading from CY7C1049V33 is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location CY7C1049V33 specified by the address pins will appear mon the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when CY7C1049V33 is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1049V33 is available in a standard 400-mil-wide 36-pin SOJ package with center power and ground (revolutionary) pinout.