CY7C1046CV33

Storage Temperature  .................................65°C to +150°C
Ambient Temperature with
Power Applied..............................................55°C to +125°C
Supply Voltage on VCC  to Relative GND^[3] .......0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State^[3] .....................................0.5V to V_CC  + 0.5V
DC Input Voltage^[3] ..................................0.5V to V_CC  + 0.5V

Current into Outputs (LOW)..............................................20 mA
Static Discharge Voltage................................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..........................................................> 200 mA

The CY7C1046CV33 is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE ), an active LOW Output Enable (OE ), and three-state drivers.Writing to CY7C1061AV25 is accomplished by taking Chip Enable (CE ) and Write Enable (WE ) inputs LOW. Data on the four I/Opins (I/O₀  through I/O₃ ) is then written into the location specified on the address pins (A ₀ through A₁₉ ).

Reading from CY7C1061AV25 is accomplished by taking Chip Enable (CE ) and Output Enable (OE ) LOW while forcing Write Enable (WE ) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

The four input/output pins (I/O₀  through I/O₃ ) are placed in ahigh-impedance state when CY7C1061AV25 is deselected (CE  HIGH), the outputs are disabled (OE  HIGH), or during a Write operation (CE  LOW, and WE LOW).

The CY7C1046CV33 is available in a standard 400-mil-wide 32-pin SOJ package with center power and ground (revolu- tionary) pinout.