Features: High speed
-tAA = 10ns
Low active power for 10 ns speed
-324 mW (max.)
2.0V data retention
Automatic power-down when deselected
TTL-compatible inputs and outputs
Easy memory expansion with CE and OE featuresPinout
SpecificationsStorage Temperature .................................65°C to +150°C
Ambient Temperature with
Power Applied..............................................55°C to +125°C
Supply Voltage on VCC to Relative GND[3] .......0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State[3] .....................................0.5V to VCC + 0.5V
DC Input Voltage[3] ..................................0.5V to VCC + 0.5V
Current into Outputs (LOW)..............................................20 mA
Static Discharge Voltage................................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..........................................................> 200 mA
DescriptionThe CY7C1046CV33 is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE ), an active LOW Output Enable (OE ), and three-state drivers.Writing to CY7C1061AV25 is accomplished by taking Chip Enable (CE ) and Write Enable (WE ) inputs LOW. Data on the four I/Opins (I/O0 through I/O3 ) is then written into the location specified on the address pins (A 0 through A19 ).
Reading from CY7C1061AV25 is accomplished by taking Chip Enable (CE ) and Output Enable (OE ) LOW while forcing Write Enable (WE ) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.
The four input/output pins (I/O0 through I/O3 ) are placed in ahigh-impedance state when CY7C1061AV25 is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a Write operation (CE LOW, and WE LOW).
The CY7C1046CV33 is available in a standard 400-mil-wide 32-pin SOJ package with center power and ground (revolu- tionary) pinout.
CY7C1046CV33 Data Sheet
