CY7C1046BV33

Storage Temperature .................................65°C to +150°C
Ambient Temperature with
Power Applied.............................................55°C to +125°C
Supply Voltage on V  to Relative GND^[1] ...........0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State ^[1].....................................0.5V to V _CC + 0.5V

DC Input Voltage^[1]...................................0.5V to V_CC  + 0.5V

Current into Outputs (LOW) ..............................................20 mA
Static Discharge Voltage..................................................>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current............................................................>200 mA

The CY7C1046BV33 is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Easy memoryexpansion is provided by an active LOW Chip Enable (CE ), an active LOW Output Enable (OE), and three-state drivers. Writ- ing to the device is accomplished by taking Chip Enable (CE ) and Write Enable (WE) inputs LOW. Data on the four I/O pins(I/O₃  through I/O ) is then written into the location specified on the address pins (A ₀ through A₁₉ ).

Reading from CY7C1046BV33 is accomplished by taking Chip Enable (CE ) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The four input/output pins (I/O  through I/O ) are placed in a high-impedance state when CY7C1046BV33 is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE  LOW, and WE LOW). The CY7C1046BV33 is available in a standard 400-mil-wide 32-pin SOJ package with center power and ground (revolution- ary) pinout.