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CY7C1022

Features: • 5.0V operation (± 10%)• High speed -tAA = 12 ns• Low active power -825 mW (max., 10 ns, L version)• Very Low standby power -500 mW (max., L version)• Automatic power-down when deselected• Independent Control of Upper and Lower bytes• Availa...

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SeekIC No. : 004319777 Detail

CY7C1022: Features: • 5.0V operation (± 10%)• High speed -tAA = 12 ns• Low active power -825 mW (max., 10 ns, L version)• Very Low standby power -500 mW (max., L version)• Au...

CY7C1022 Data Sheet

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Part Number:
CY7C1022
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 5.0V operation (± 10%)
• High speed
   -tAA = 12 ns
• Low active power
   -825 mW (max., 10 ns, "L" version)
• Very Low standby power
   -500 mW (max., "L" version)
• Automatic power-down when deselected
• Independent Control of Upper and Lower bytes
• Available in 400-mil SOJ


Pinout

Connection Diagram


Specifications

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature .............................65*C to +150*C
Ambient Temperature with
Power Applied..........................................55*C to +125*C
Supply Voltage on VCC to Relative GND[1] .... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ....................................0.5V to VCC + 0.5V
DC Input Voltage[1] ................................ 0.5V to VCC + 0.5V
Current into Outputs (LOW)........................................... 20 mA


Description

The CY7C1022 is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected.

Writing to the device is accomplished by taking chip enable (CE) input HIGH and write enable (WE) input LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A14). If byte high enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A14).

Reading from CY7C1022 is accomplished by taking chip enable (CE) HIGH and output enable (OE) LOW while forcing the write enable (WE) HIGH. If byte low enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O1 to I/O8. If byte high enable (BHE) is LOW, then data from memory CY7C1022 will appear on I/O9 to I/O16. See the truth table at the back of this datasheet for a complete description of read and write modes.

The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when CY7C1022 is deselected (CE LOW), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE HIGH, and WE LOW).

The CY7C1022 is available in standard 400-mil-wide SOJ packages.




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