SRAM 1M 512K IND FAST ASYNC SRAM
CY7C1021DV33-10ZSXI: SRAM 1M 512K IND FAST ASYNC SRAM
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Memory Size : | 1 Mbit | Organization : | 64 K x 16 |
Access Time : | 10 ns | Supply Voltage - Max : | 3.6 V |
Supply Voltage - Min : | 3 V | Maximum Operating Current : | 3 mA |
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C |
Mounting Style : | SMD/SMT | Package / Case : | TSOP-44 |
Packaging : | Tray |
The CY7C1021DV33-10ZSXI is designed as one kind of 1-Mbit (64K x 16) Static RAM that is available in Pb-free 44-pin 400-Mil wide Molded SOJ, 44-pin TSOP II and 48-ball VFBGA packages. Features of this device are:(1)Automatic power-down when deselected;(2)2.0V data retention;(3)CMOS for optimum speed/power;(4)Independent control of upper and lower bits;(5)Available in Lead-Free 44-lead (400-mil) Molded SOJ and 44-pin TSOP II packages;(6)Pin-and function-compatible with CY7C1021CV33.
The absolute maximum ratings of the CY7C1021DV33-10ZSXI can be summarized as:(1)Storage Temperature: -65°C to +150°C;(2)Ambient Temperature with Power Applied: -55°C to +125°C;(3)Supply Voltage on VCC to Relative GND:0.3V to +4.6V;(4)DC Voltage Applied to Outputs in High-Z State: -0.3V to VCC + 0.3V;(5)DC Input Voltage: -0.3V to VCC + 0.3V;(6)Current into Outputs (LOW): 20 mA;(7)Static Discharge Voltage: >2001 V;(8)Latch-up Current: >200 mA.
The electrical characteristics of the CY7C1021DV33-10ZSXI can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.0 to VCC + 0.3 V;(4)Input LOW Voltage:0.3 to 0.8 V;(5)Input Leakage Current:1 to +1 A. If you want to know more information such as the electrical characteristics about CY7C1021DV33-10ZSXI, please download the datasheet in www.seekic.com or www.chinaicmart.com .
Technical/Catalog Information | CY7C1021DV33-10ZSXI |
Vendor | Cypress Semiconductor Corp |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 1M (64K x 16) |
Speed | 10ns |
Interface | Parallel |
Package / Case | 44-TSOP II |
Packaging | Tray |
Voltage - Supply | 3 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | CY7C1021DV33 10ZSXI CY7C1021DV3310ZSXI 428 1974 ND 4281974ND 428-1974 |