CY7C1021DV33-10VXIT

SRAM 1M 512K IND FAST ASYNC SRAM

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SeekIC No. : 00472334 Detail

CY7C1021DV33-10VXIT: SRAM 1M 512K IND FAST ASYNC SRAM

floor Price/Ceiling Price

US $ .97~1.12 / Piece | Get Latest Price
Part Number:
CY7C1021DV33-10VXIT
Mfg:
Cypress Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~340
  • 340~500
  • 500~1000
  • 1000~2000
  • Unit Price
  • $1.12
  • $1.09
  • $1.01
  • $.97
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Memory Size : 1 Mbit Access Time : 10 ns
Supply Voltage - Max : 3.6 V Supply Voltage - Min : 3 V
Maximum Operating Current : 60 mA Maximum Operating Temperature : + 85 C
Minimum Operating Temperature : - 40 C Mounting Style : SMD/SMT
Package / Case : SOJ Packaging : Reel    

Description

Organization :
Mounting Style : SMD/SMT
Access Time : 10 ns
Supply Voltage - Max : 3.6 V
Maximum Operating Temperature : + 85 C
Minimum Operating Temperature : - 40 C
Memory Size : 1 Mbit
Packaging : Reel
Supply Voltage - Min : 3 V
Maximum Operating Current : 60 mA
Package / Case : SOJ


Pinout

  Connection Diagram


Description

The CY7C1021DV33-10VXIT is a type of 1-Mbit (64K x 16) static RAM,which is organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly cuts down power consumption when deselecte d.Writing to the device is finished by taking chip enable (CE) and write enable (WE) inputs LOW.

Features of the CY7C1021DV33-10VXIT are:(1)temperature ranges:industrial is 0  to 85,automotive-A is 0 to 85,automotive-E is 0 to 125;(2)pin-and function-compatible with CY7C1021CV33;(3)low active power:ICC=60 mA @ 10 ns; (4)low CMOS standby power,ISB2=3 mA; (5)automatic power-down when deselected;(6)CMOS for opt imum speed/power;(7)independent control of upper and lower bits;(8)available in Pb-free 44-pin 400-Mil wide molde d SOJ,44-pin TSOP II and 48-ball VFBGA packages.

The absolute maximum ratings and DC electrial characteristic of the CY7C1021DV33-10VXIT can be summarized as:(1):storage temperature ranges from65°C to +150°C;(2):ambient temperature with power applied is55°C to +125°C;(3):supply voltage on Vcc relative to GND is0.3V to +4.6V;(4):DC voltage applied to outputs in high Z stat e is0.3V to Vcc+ 0.3V;(5):DC input voltage is0.3V to Vcc + 0.3V;(6):current into outputs (LOW)is 20 mA;(7):static discharge voltage(per MIL-STD-883, method 3015)is greater than 2001V;(8):latch up current is greater than 200 m A.DC electrial characteristic:(1):output high voltage is 2.4V min when VCC is min andIOH is4.0 mA;(2):output low voltage is 0.4V min when VCC is min and IOL is 8.0 mA;(3):input high voltage is 2.0V min and Vcc+0.3V max;(4):out put leakage current is-1uA min and+1uA max when V1 is between GND and VCC.




Parameters:

Technical/Catalog InformationCY7C1021DV33-10VXIT
VendorCypress Semiconductor Corp
CategoryIntegrated Circuits (ICs)
Memory TypeSRAM - Asynchronous
Memory Size1M (64K x 16)
Speed10nS
InterfaceParallel
Package / Case44-SOJ
PackagingTape & Reel (TR)
Voltage - Supply3 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryRAM
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names CY7C1021DV33 10VXIT
CY7C1021DV3310VXIT



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