SRAM 1M 512K IND FAST ASYNC SRAM
CY7C1021DV33-10VXIT: SRAM 1M 512K IND FAST ASYNC SRAM
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Memory Size : | 1 Mbit | Access Time : | 10 ns | ||
Supply Voltage - Max : | 3.6 V | Supply Voltage - Min : | 3 V | ||
Maximum Operating Current : | 60 mA | Maximum Operating Temperature : | + 85 C | ||
Minimum Operating Temperature : | - 40 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOJ | Packaging : | Reel |
The CY7C1021DV33-10VXIT is a type of 1-Mbit (64K x 16) static RAM,which is organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly cuts down power consumption when deselecte d.Writing to the device is finished by taking chip enable (CE) and write enable (WE) inputs LOW.
Features of the CY7C1021DV33-10VXIT are:(1)temperature ranges:industrial is 0 to 85,automotive-A is 0 to 85,automotive-E is 0 to 125;(2)pin-and function-compatible with CY7C1021CV33;(3)low active power:ICC=60 mA @ 10 ns; (4)low CMOS standby power,ISB2=3 mA; (5)automatic power-down when deselected;(6)CMOS for opt imum speed/power;(7)independent control of upper and lower bits;(8)available in Pb-free 44-pin 400-Mil wide molde d SOJ,44-pin TSOP II and 48-ball VFBGA packages.
The absolute maximum ratings and DC electrial characteristic of the CY7C1021DV33-10VXIT can be summarized as:(1):storage temperature ranges from65°C to +150°C;(2):ambient temperature with power applied is55°C to +125°C;(3):supply voltage on Vcc relative to GND is0.3V to +4.6V;(4):DC voltage applied to outputs in high Z stat e is0.3V to Vcc+ 0.3V;(5):DC input voltage is0.3V to Vcc + 0.3V;(6):current into outputs (LOW)is 20 mA;(7):static discharge voltage(per MIL-STD-883, method 3015)is greater than 2001V;(8):latch up current is greater than 200 m A.DC electrial characteristic:(1):output high voltage is 2.4V min when VCC is min andIOH is4.0 mA;(2):output low voltage is 0.4V min when VCC is min and IOL is 8.0 mA;(3):input high voltage is 2.0V min and Vcc+0.3V max;(4):out put leakage current is-1uA min and+1uA max when V1 is between GND and VCC.
Technical/Catalog Information | CY7C1021DV33-10VXIT |
Vendor | Cypress Semiconductor Corp |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 1M (64K x 16) |
Speed | 10nS |
Interface | Parallel |
Package / Case | 44-SOJ |
Packaging | Tape & Reel (TR) |
Voltage - Supply | 3 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | CY7C1021DV33 10VXIT CY7C1021DV3310VXIT |