CY7C1021BV33-8BAC

The CY7C1021BV is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected.

Writing to CY7C1021BV33-8BAC is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) CY7C1021BV33-8BAC is written into the location specified on the address pins (A0 through A15).

Reading from CY7C1021BV33-8BAC is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW, then data from memory CY7C1021BV33-8BAC will appear on I/O9 to I/O16. See the truth table at the back of this data sheet for a complete description of read and write modes.

The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when CY7C1021BV33-8BAC is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

The CY7C1021BV is available in 400-mil-wide SOJ, standard 44-pin TSOP Type II, and 48-ball mini BGA packages.