Features: •High speed-tAA= 10 ns •CMOS for optimum speed/power•Center power/ground pinout•Automatic power-down when deselected•Easy memory expansion with CE</a>and OE</a>options•Functionally equivalent to CY7C1019V33PinoutSpecifications(Above which t...
CY7C1019BV33: Features: •High speed-tAA= 10 ns •CMOS for optimum speed/power•Center power/ground pinout•Automatic power-down when deselected•Easy memory expansion with CE</a>an...
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The CY7C1019BV33 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE</a>), an active LOW Output Enable (OE</a>), and three-state drivers. CY7C1019BV33 has an automatic power-down feature that significantly reduces power consumption when deselected.
Writing to CY7C1019BV33 is accomplished by taking Chip Enable (CE</a>) and Write Enable (WE</a>) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location speci-fied on the address pins (A0 through A16).
Reading from the device is accomplished by taking Chip Enable (CE</a>) and Output Enable (OE</a>) LOW while forcing Write Enable (WE</a>) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when CY7C1019BV33 is deselected (CE</a>HIGH), the outputs are disabled (OE</a> HIGH), or during a write operation (CE</a> LOW, and WE</a> LOW).
The CY7C1019BV33 is available in a standard 400-mil-wide package.