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CY7C1019

Features: • High speed -tAA = 10 ns• CMOS for optimum speed/power• Center power/ground pinout• Automatic power-down when deselected• Easy memory expansion with CE andOE optionsPinoutSpecifications(Above which the useful life may be impaired. For user guidelines, not t...

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SeekIC No. : 004319740 Detail

CY7C1019: Features: • High speed -tAA = 10 ns• CMOS for optimum speed/power• Center power/ground pinout• Automatic power-down when deselected• Easy memory expansion with CE andOE...

CY7C1019 Data Sheet

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Part Number:
CY7C1019
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High speed
   -tAA = 10 ns
• CMOS for optimum speed/power
• Center power/ground pinout
• Automatic power-down when deselected
• Easy memory expansion with CE and OE options


Pinout

Connection Diagram


Specifications

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ..............................65°C to +150°C
Ambient Temperature with
Power Applied...........................................55°C to +125°C
Supply Voltage on VCC to Relative GND[1] .... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ..................................0.5V to VCC + 0.5V
DC Input Voltage[1]...............................0.5V to VCC + 0.5V
Current into Outputs (LOW)........................................ 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.....................................................>200 mA


Description

The CY7C1019 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE), an active LOW output enable (OE), and three-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected.

Writing to CY7C1019is accomplished by taking chip enable (CE) and write enable (WE)CY7C1019  inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking chip enable (CE) and output enable (OE) LOW while forcing write enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when CY7C1019 is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW).

The CY7C1019 is available in standard 400-mil-wide SOJs.




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