CY7C1011BV33

The CY7C1011BV33 is a high-performance CMOS static RAM organized as 131,072 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected.

Writing to CY7C1011BV33 is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data ofCY7C1011BV33 from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A16).

Reading from CY7C1011BV33 is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O9 to I/O16. See the truth table at the back of this data sheet for a complete description of read and write modes.

The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when CY7C1011BV33 is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

The CY7C1011BV33 is available in standard 44-pin TSOP Type II package.