CY7C09159

Features: • True Dual-Ported memory cells which allow simultaneous access of the same memory location• 2 Flow-Through/Pipelined devices -8K x 9 organization (CY7C09159) -16K x 9 organization (CY7C09169)• 3 Modes -Flow-Through -Pipelined -Burst• Pipelined output mode on both...

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SeekIC No. : 004319670 Detail

CY7C09159: Features: • True Dual-Ported memory cells which allow simultaneous access of the same memory location• 2 Flow-Through/Pipelined devices -8K x 9 organization (CY7C09159) -16K x 9 organiza...

floor Price/Ceiling Price

Part Number:
CY7C09159
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• True Dual-Ported memory cells which allow simultaneous access of the same memory location
• 2 Flow-Through/Pipelined devices
   -8K x 9 organization (CY7C09159)
   -16K x 9 organization (CY7C09169)
• 3 Modes
   -Flow-Through
   -Pipelined
   -Burst
• Pipelined output mode on both ports allows fast 100-MHz cycle time
• 0.35-micron CMOS for optimum speed/power
 


Pinout

  Connection Diagram




Specifications

(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature................................. 65°C to +150°C
Ambient Temperature with Power Applied..55°C to +125°C
Supply Voltage to Ground Potential................0.3V to +7.0V
DC Voltage Applied to
Outputs in High Z State..................................0.5V to +7.0V
DC Input Voltage............................................0.5V to +7.0V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage............................................>2001V
Latch-Up Current......................................................>200 mA



Description

The CY7C09159 and CY7C09169 are high speed synchronous CMOS 8K and 16K x 9 dual-port static RAMs. Two ports are provided, permitting independent, simultaneous access for reads and writes to any location in memory.[2] Registers on control, address, and data lines CY7C09159 allow for minimal set-up and hold times. In pipelined output mode, data ofCY7C09159 is registered for decreased cycle time. Clock to data valid t CD2  = 6.5 ns (pipe-lined). Flow-through mode can also be used to bypass the pipelined output register to eliminate access latency. In flow-through mode data will be available tCD1 = 15 ns after the address of CY7C09159 is clocked into the device. Pipelined output or flow-through mode is selected via the F T /Pipe pin.

Each port of CY7C09159 contains a burst counter on the input address register. The internal write pulse width is independent of the LOW-to-HIGH transition of the clock signal. The internal write pulse is self-timed to allow the shortest possible cycle times.

A HIGH on CE 0 or LOW on CE1 for one clock cycle will power down the internal circuitry to reduce the static power consumption. The use of multiple Chip Enables allows easier banking of multiple chips for depth expansion configurations. In the pipelined mode, one cycle is required with CE 0 LOW and CE1 HIGH to reactivate the outputs. Counter enable inputs of CY7C09159 are provided to stall the operation of the address input ofCY7C09159 and utilize the internal address generated by the internal counter for fast interleaved memory applications. A port's burst counter is loaded with the port's address strobe(ADS). When the port's count enable CNTEN CY7C09159 is deasserted. The counter can address the entire memory array and will loop back to the start. Counter reset (CNTRST ) is used to reset the burst counter.

All parts of CY7C09159 are available in 100-pin Thin Quad Plastic Flatpack (TQFP) packages.




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