Features: • True dual-ported memory cells that allow simultaneous access of the same memory location• Synchronous pipelined operation• Family of 512-Kbit, 1-Mbit, 2-Mbit, 4-Mbit and 9-Mbit devices• Pipelined output mode allows fast operation• 0.18-micron CMOS for opti...
CY7C0830V: Features: • True dual-ported memory cells that allow simultaneous access of the same memory location• Synchronous pipelined operation• Family of 512-Kbit, 1-Mbit, 2-Mbit, 4-Mbit an...
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The FLEx18 family includes 512-Kbit, 1-Mbit, 2-Mbit, 4-Mbit and 9-Mbit pipelined, synchronous, true dual-port static RAMs that are high-speed, low-power 3.3V CMOS. Two ports are provided, permitting independent, simultaneous access to any location in memory. The result of writing to the same location by more than one port at the same time is undefined. Registers on control, address, and data lines allow for minimal set-up and hold time.
During a Read operation, data of CY7C0830V is registered for decreased cycle time. Each port contains a burst counter on the input address register. After externally loading the counter with the initial address, the counter will increment the address internally (more details to follow). The internal Write pulse width is independent of the duration of the R/W input signal. The internal Write pulse of CY7C0830V is self-timed to allow the shortest possible cycle times.
A HIGH on CE0 or LOW on CE1 for one clock cycle will power down the internal circuitry to reduce the static power consumption. One cycle with chip enables asserted is required to reactivate the outputs.
Additional features of CY7C0830V include: readback of burst-counter internal address value on address lines, counter-mask registers to control the counter wrap-around, counter interrupt (CNTINT) flags, readback of mask register value on address lines, retransmit functionality, interrupt flags for message passing, JTAG for boundary scan, and asynchronous Master Reset (MRST).
The CY7C0833V device in this family has limited features. Please see Address Counter and Mask Register Operations[15] on page 6 for details.