DescriptionThe CY7C0241AV-20AC is a high-speed BICMOS 4k*8 dual-port static RAMs. The features of CY7C0241AV-20AC can be summarized as (1)true dual-ported memory cells which allow simultaneous access of the same memory location; (2)4/8/16k*16 organization; (3)4/8k*18 organization; (4)16k*18 organi...
CY7C0241AV-20AC: DescriptionThe CY7C0241AV-20AC is a high-speed BICMOS 4k*8 dual-port static RAMs. The features of CY7C0241AV-20AC can be summarized as (1)true dual-ported memory cells which allow simultaneous acces...
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The CY7C0241AV-20AC is a high-speed BICMOS 4k*8 dual-port static RAMs. The features of CY7C0241AV-20AC can be summarized as (1)true dual-ported memory cells which allow simultaneous access of the same memory location; (2)4/8/16k*16 organization; (3)4/8k*18 organization; (4)16k*18 organization; (5)0.35-micron CMOS for optimum speed/power; (6)high-speed access: 20 and 25ns; (7)low operating power.
The absolute maximum ratings of the CY7C0241AV-20AC are: (1)storage temperature: -65 to +150; (2)ambient temperature with power applied: -55 to +125; (3)supply voltage to ground potential: -0.5V to +4.6V; (4)DC voltage applied to outputs in high Z state: -0.5V to VCC+0.5V.
The following is about the electrical characteristics of CY7C0241AV-20AC: (1)output high voltage: 2.4V min at VCC=min, IOH=-4.0mA; (2)output low voltage: 0.4V max at VCC=min, IOH=16.0mA; (3)input high level: 2.0V min; (4)input low level: 0.8V max; (5)input load current: -10A min and +10A max at GNDVIVCC; (6)output leakage current: -10A min and +10A max at GNDVINVCC, output disabled; (7)operating current: 120mA max at VCC=max, IOUT=0mA, output disable; (8)standby current: 35mA max.