CY7B131

The CY7B131 is a high-speed BICMOS 1k by 8 dual-port static RAMs. The features of CY7B131 can be summarized as (1)0.8-micron BICMOS for high performance; (2)automatic power-down; (3)capable of withstanding greater than 2001V electrostatic; (4)fully asynchronous operation; (5)master CY7B131 easily expands data bus width to 16 or more bits using slave CY7B141; (6)BUSY output flag on CY7B131; BUSY input on CYB141; (7)INT flag for port-to-port communication.

The absolute maximum ratings of the CY7B131 are: (1)storage temperature: -65 to ±150; (2)ambient temperature with power applied: -55 to ±125; (3)supply voltage to ground potential: -0.5V to ±7.0V; (4)DC voltage applied to outputs in high Z state: -0.5V to ±7.0V; (5)DC input voltage: -3.5V to ±7.0V.

The following is about the electrical characteristics of CY7B131: (1)output high voltage: 2.4V min at VCC=min, IOH=-4.0mA; (2)output low voltage: 0.4V max at VCC=min, IOH=16.0mA; (3)input high level: 2.2V min; (4)input low level: 0.8V max; (5)input load current: -10A min and +10A  max at GNDVIVCC; (6)output leakage current: -10A min and +10A max at GNDVINVCC, output disabled; (7)operating current: 260mA max at VCC=max, IOUT=0mA, output disable; (8)standby current: 110mA max.