DescriptionThe CY62256VLL70RZC belongs to CY62256V family which is composed of two high-performance CMOS static RAM's organized as 32K words by 8 bits. An active LOW write enable signal (WE) controls the writing/reading operation of the memory. The input/output pins of CY62256VLL70RZCremain in a h...
CY62256VLL70RZC: DescriptionThe CY62256VLL70RZC belongs to CY62256V family which is composed of two high-performance CMOS static RAM's organized as 32K words by 8 bits. An active LOW write enable signal (WE) control...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Very high speed: 45 ns• Wide voltage range: 2.2V to 3.6V• Pin compat...
The CY62256VLL70RZC belongs to CY62256V family which is composed of two high-performance CMOS static RAM's organized as 32K words by 8 bits. An active LOW write enable signal (WE) controls the writing/reading operation of the memory. The input/output pins of CY62256VLL70RZC remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state drivers. CY62256VLL70RZC has an automatic power-down feature, reducing the power consumption by over 99% when deselected. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A14). Reading the CY62256VLL70RZC is accomplished by selecting the device and enabling the outputs, CE and OE active LOW, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins.
The features of CY62256VLL70RZC can be summarized as (1)temperature ranges - commercial: 0°C to 70°C - industrial: 40°C to 85°C - automotive: 40°C to 125°C; (2)speed: 70 ns and 100 ns; (3)low voltage range: - CY62256V (2.7V3.6V) - CY62256V25 (2.3V2.7V); (4)low active power and standby power; (5)easy memory expansion with CE and OE features; (6)TTL-compatible inputs and outputs; (7)automatic power-down when deselected; (8)CMOS for optimum speed/power; (9)package available in a standard 450-mil-wide (300-mil body width) 28-lead narrow SOIC, 28-lead TSOP-1, and reverse 28-lead TSOP-1 package.
The absolute maximum ratings of CY62256VLL70RZC are (1)storage temperature: 65°C to +150°C; (2)ambient temperature with power applied: 55°C to +125°C; (3)supply voltage to ground potential (Pin 28 to Pin 14): 0.5V to +4.6V; (4)DC voltage applied to outputs in high-z state[3]: 0.5V to VCC + 0.5V; (5)DC input voltage[3]: 0.5V to VCC + 0.5V; (6)output current into outputs (LOW): 20 mA; (7)static discharge voltage(per MIL-STD-883, Method 3015): > 2001V; (8)latch-up current: > 200 mA.