CY62167EV30

significantly reduces power consumption by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE The CY62167EV30 is a high performance CMOS static RAM organized as 1M words by 16 bits / 2M words by 8 bits. This device features advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The CY62167EV30 also has an automatic power down feature that and BLE are HIGH). The input and output pins of CY62167EV30 (IO0 through IO15) are placed in a high-impedance state when: the device is deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or a write operation is in progress (CE1 LOW, CE2 HIGH and WE LOW).

To write to the CY62167EV30, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from IO pins (IO0 through IO7) is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from the IO pins (IO8 through IO15) is written into the location specified on the address pins (A0 through A19).

To read from the CY62167EV30, take Chip Enables (CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on IO0 to IO7. If Byte High Enable (BHE) is LOW, then data from memory will appear on IO8 to IO15. See the "Truth Table" on page 10 for a complete description of read and write modes.