CY62158EV30

The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL^®) in portable applications such as cellular telephones. The CY62158EV30 also has an automatic power down feature that significantly educes power consumption. Placing the device into standby mode reduces power consumption significantly when deselected (CE₁ HIGH or CE₂ LOW). The eight input and output pins (IO₀ through IO₇) are placed in a high impedance state when the CY62158EV30 is deselected (CE₁ HIGH or CE₂ LOW), the outputs are disabled (OE HIGH), or a write operation is in progress (CE₁ LOW and CE₂ HIGH and WE LOW).

To write to the CY62158EV30, take Chip Enables (CE₁ LOW and CE₂ HIGH) and Write Enable (WE) input LOW. Data on the eight IO pins (IO₀ through IO₇) is then written into the location specified on the address pins (A₀ through A₁₉).

To read from the CY62158EV30, take Chip Enables (CE₁ LOW and CE₂ HIGH) and OE LOW while forcing the WE HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the IO pins. See the "Truth Table" on page 8 for a complete description of read and write modes.