CY62158DV30

The CY62158DV30 is a high-performance CMOS static RAMs organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.

This is ideal for providing More Battery Life™ (MoBL^®) in portable applications such as cellular telephones. The CY62158DV30 also has an automatic power-down feature that significantly reduces power consumption. The CY62158DV30 can be put into standby mode reducing power consumption by 85% when deselected (CE₁ HIGH or CE₂ LOW).

Writing to the CY62158DV30 is accomplished by taking Chip Enable 1 (CE₁) and Write Enable (WE) inputs LOW and Chip Enable 2 (CE₂) HIGH. Data on the eight I/O pins (I/O₀ through I/O₇) is then written into the location specified on the address pins (A₀ through A₁₉).

Reading from the CY62158DV30 is accomplished by taking Chip Enable 1 (CE₁) and Output Enable (OE) LOW and Chip Enable 2 (CE₂) HIGH while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins CY62158DV30 will appear on the I/O pins.

The eight input/output pins of CY62158DV30 (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE₁
LOW and CE₂ HIGH), the outputs of CY62158DV30 are disabled (OE HIGH), or during a write operation (CE₁ LOW and CE₂ HIGH and WE LOW). See the truth table for a complete description of read and write modes.