CY62157DV30

Features:

• Temperature Ranges
-Industrial: 40°C to 85°C
-Automotive: 40°C to 125°C (Preliminary)
• Very high speed: 45 ns, 55 ns and 70 ns
• Wide voltage range: 2.20V 3.60V
• Pin-compatible with CY62157CV25, CY62157CV30, and CY62157CV33
• Ultra-low active power
- Typical active current: 1.5 mA @ f = 1 MHz
- Typical active current: 12 mA @ f = fmax
• Ultra-low standby power
• Easy memory expansion with CE1, CE2, and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered: 48-ball BGA, 48-pin TSOPI, and 44-pin TSOPII


Pinout




Description

The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The CY62157DV30 can also be put into standby mode when deselected (CE₁ HIGH or CE₂ LOW or both BHE and BLE are HIGH). The input/output pins of CY62157DV30 (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE₁ HIGH or CE₂ LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are
disabled (BHE, BLE HIGH), or during a write operation (CE₁ LOW, CE₂ HIGH and WE LOW).

Writing to the CY62157DV30 is accomplished by taking Chip Enables (CE₁ LOW and CE₂ HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A18). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A18).

Reading from the CY62157DV30 is accomplished by taking Chip Enables (CE₁ LOW and CE₂ HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data of CY62157DV30 from memory will appear on I/O8 to I/O15. See the truth table for a complete description of read and write modes.