CY62157DV18

Features:

• Very high speed: 55 ns and 70 ns
• Voltage range: 1.65V to 1.95V
• Pin compatible with CY62157CV18
• Ultra-low active power
        -Typical active current: 1 mA @ f = 1 MHz
        -Typical active current: 10 mA @ f = fMAX
• Ultra-low standby power
• Easy memory expansion with CE 1, CE2, and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered in a 48-ball FBGA


Pinout




Specifications

Storage Temperature .................................65 to +150
Ambient Temperature with
Power Applied.............................................55 to +125
Supply Voltage
to Ground Potential ....................... 0.2V to V_CCMAX + 0.2V
DC Voltage Applied to Outputs
in High-Z State^[4] .................................0.2V to V_CC + 0.2V
DC Input Voltage^[4] ............................. 0.2V to V_CC + 0.2V
Output Current into Outputs (LOW)............................ 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ................................................... > 200 mA
Operating Range


Description

The CY62157DV18 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

CY62157DV18 is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The CY62157DV18 also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The CY62157DV18 can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW or both BHE and BLE are HIGH. The input/output pins of CY62157DV18 (I/O0 through I/O15) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW, outputs of CY62157DV18 are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or during a write operation (Chip Enable 1 (CE11) LOW and Chip Enable 2 (CE2) HIGH and WE LOW).

Writing to the CY62157DV18 is accomplished by taking Chip Enable 1 (CE1) LOW and Chip Enable 2 (CE2) HIGH and Write Enable (WE) input LOW. If Byte Low Enable (BLE ) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A18). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A18).

Reading from the CY62157DV18 is accomplished by taking Chip Enable 1 (CE11) LOW and Chip Enable 2 (CE2) HIGH and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE)) is LOW, then data from the memory location specified by the address pins of CY62157DV18 will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes.