CY62148VLL70BAI

Description

The CY62148VLL70BAI belongs to CY62148V family which is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. CY62148VLL70BAI features ad- vanced circuit design to provide ultralow active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW and WE LOW). The CY62148V is available in a 36-ball FBGA, 32 pin TSOPII, and a 32-pin SOIC package. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The CY62148VLL70BAI can be put into standby mode when deselected (CE HIGH). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location speci- fied on the address pins (A0 through A18). Reading from the device is accomplished by taking Chip En- able (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

The features of CY62148VLL70BAI can be summarized as (1)low voltage range: 2.7V-3.6V; (2)ultra low active power; (3)low standby power; (4)TTL-compatible inputs and outputs; (5)automatic power-down when deselected; (6)CMOS for optimum speed/power.

The absolute maximum ratings(Above which the useful life may be impaired. For user guide-lines, not tested.) of CY62148VLL70BAI are (1)storage temperature: -65°C to +150°C; (2)ambient temperature with power applied: 55°C to +125°C; (3)supply voltage to ground potential: -0.5V to +4.6V; (4)DC voltage applied to outputs in high Z state(1): -0.5V to VCC + 0.5V; (5)DC input voltage[1]: -0.5V to VCC + 0.5V; (6)output current into outputs (LOW): 20 mA; (7)static discharge voltage: >2001V (per MIL-STD-883, method 3015); (8)latch-up current: >200 mA.