CY62148DV30

The CY62148DV30 is a high-performance CMOS static RAMs organized as 512K words by 8 bits. CY62148DV30 features advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can be put into standby mode reducing power consumption when deselected (CE HIGH).

Writing to the CY62148DV30 is accomplished by taking Chip Enabl (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18).

Reading from the CY62148DV30 is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

The eight input/output pins of CY62148DV30 (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW and WE LOW).