CY62138VN

The CY62138VN is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The CY62138VN also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The CY62138VN can be put into standby mode when deselected (CS1 HIGH or CS2 LOW). Writing to the device is accomplished by taking Chip Enable One (CS1) and Write Enable (WE) inputs LOW and Chip Enable Two (CS2) HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A17).Reading from the device is accomplished by taking Chip Enable One (CS1) and Output Enable (OE) LOW while forcing Write Enable(WE) and Chip Enable Two (CS2) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the CY62138VN is deselected (CS1 HIGH or CS2 LOW), the outputs are disabled (OE HIGH), or during a write operation (CS1 LOW, CS2 HIGH, and WE LOW).