CY62138EV30

The CY62138EV30 is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL^®) in portable applications such as cellular telephones. The CY62138EV30 also has an automatic power-down feature that significantly reduces power consumption. The device can be put into standby mode reducing power consumption when deselected (CE HIGH).

Writing to the CY62138EV30 is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O₀ through I/O₇) is then written into the location specified on the address pins (A₀ through A₁₈).

Reading from the CY62138EV30 is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of  the memory location specified by the address pins of CY62138EV30 will appear on the I/O pins.

The eight input/output pins of CY62138EV30(I/O₀ through I/O₇) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW and WE LOW).