CY62137VN

Storage Temperature ................................65°C to +150°C
Ambient Temperature with
Power Applied............................................55°C to +125°C
Supply Voltage to Ground Potential ............... 0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State^[4] ...................................0.5V to VCC + 0.5V
DC Input Voltage^[4]................................0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................... 20 mA
Static Discharge Voltage..............................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current....................................................... > 200 mA
Notes:4. V_IL(min.) = 2.0V for pulse durations less than 20 ns.

The CY62137VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL^®) in portable applications such as cellular telephones. The CY62137VN also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The CY62137VN can also be put into standby mode when deselected (CE HIGH) or when CE is LOW and both BLE and BHE are HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O ₀ through I/O ₇), is written into the location specified on the address pins (A₀ through A₁₆). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O ₈ through I/O₁₅) is written into the location specified on the address pins (A₀ through A ₁₆).Reading from the CY62137VN is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O ₀ to I/O ₇. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O₈ to I/O₁₅. See the truth table at the back of this data sheet for a complete description of read and write modes.