CY62137V

Features:

• Temperature Ranges
-Commercial: 0°C to 70°C
-Industrial: 40°C to 85°C
-Automotive: 40°C to 125°C
• High Speed: 55 ns and 70 ns
• Wide voltage range: 2.7V3.6V
• Ultra-low active, standby power
• Easy memory expansion with CE  and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Package Available in a standard 44-pin TSOP Type II (forward pinout) package


Pinout




Specifications

Storage Temperature .............................................................65°C to +150°C
Ambient Temperature with Power Applied...............................55°C to +125°C
Supply Voltage to Ground Potential ............................................. 0.5V to +4.6V
DC Voltage Applied to Outputs in High-Z State^[4] .................0.5V to V_CC + 0.5V
DC Input Voltage^[4]...............................................................0.5V to V_CC + 0.5V
Output Current into Outputs (LOW)............................................................. 20 mA
Static Discharge Voltage........................................................................... > 2001V
per MIL-STD-883, Method 3015) Latch-up Current.................................. > 200 mA


Description

The CY62137V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

CY62137V is ideal for providing More Battery Life® (MoBL®) in portable applications such as cellular telephones. The CY62137V also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The CY62137V can also be put into standby mode when deselected (CE HIGH) or when CE is LOW and both BLE and BHE are HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

Writing to the CY62137V is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If Byte High Enable (BHE) is LOW, then data from I/O pins of CY62137V (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16).

Reading from the CY62137V is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data of CY62137V from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes.