CY62136CV

Features:

• Very high speed: 55 ns and 70 ns
• Voltage range:
-CY62136CV30: 2.7V3.3V
-CY62136CV33: 3.0V3.6V
-CY62136CV: 2.7V3.6V
• Pin-compatible with the CY62136V
• Ultra-low active power
-Typical active current: 1.5 mA @ f = 1 MHz
-Typical active current: 5.5 mA @ f = f_max (70-ns speed)
• Low standby power
• Easy memory expansion with CE  and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered in a 48-ball FBGA


Pinout




Specifications

Storage Temperature ........................................................................65°C to +150°C
Ambient Temperature with Power Applied..........................................55°C to +125°C
Supply Voltage to Ground Potential ............................................0.5V to V_CCMAX + 0.5V
DC Voltage Applied to Outputs in High-Z State^[4] .............................0.5V to V_CC + 0.3V
DC Input Voltage^[4]...........................................................................0.5V to V_CC + 0.3V
Output Current into Outputs (LOW) .........................................................................20 mA
Static Discharge Voltage....................................................................................... > 2001V
(per MIL-STD-883, Method 3015)Latch-up Current............................................. > 200 mA


Description

The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL®) CY62136CV in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE  HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH),or during a write operation (CE  LOW, and WE LOW).
Writing to the device is accomplished by taking Chip Enable (CE ) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16).
Reading from the CY62136CV is accomplished by taking Chip Enable (CE ) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH CY62136CV. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes.