CY62128EV30

The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL^®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE₁ HIGH or CE₂ LOW). The eight input and output pins (IO₀ through IO₇) are placed in a high impedance state when the device is deselected (CE₁ HIGH or CE₂ LOW), the outputs are disabled (OE HIGH), or a write operation is in progress (CE₁ LOW and CE₂ HIGH and WE LOW).

To write to the CY62128EV30 , take Chip Enable (CE₁ LOW and CE₂ HIGH) and Write Enable (WE) inputs LOW. Data on the eight IO pins is then written into the location specified on the Address pin (A₀ through A₁₆).

To read from the CY62128EV30, take Chip Enable (CE₁ LOW and CE₂ HIGH) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the IO pins.