CY27EE16ZE

• 18 kbits of EEPROM 16 kbits independent scratch 2 kbits dedicated to clocking functions
• Integrated, phase-locked loop with programmable P and Q counters, output dividers, and optional analog VCXO,
   digital VCXO, spread spectrum for EMI reduction
• In system programmable through I2C Serial Programming Interface (SPI). Both the SRAM and non-volatile EEPROM
   memory bits are programmable with the 3.3V supply
• Low-jitter, high-accuracy outputs
• VCXO with analog adjust
• 3.3V Operation (optional 2.5V outputs)
• 20-lead Exposed Pad, EP-TSSOP

·Higher level of integration and reduced component count by combining EEPROM and PLL. Independent EEPROM may
   be used for scratch memory, or to store up to eight clock configurations
·High-performance PLL enables control of output frequencies that are customizable to support a wide range of
   applications
·Familiar industry standard eases programming effort and enables update of data stored in 16K EEPROM scratchpad
   and 2K EEPROM clock control block while CY27EE16ZE is installed in system
·Meets critical timing requirements in complex system designs ·Write Protect (WP pin) can be programmed to serve
  as an analog control voltage for a VCXO.The VCXO function is still available with a DCXO, or digitally controlled 
  (through SPI) crystal oscillator if the pin is functioning as WP
·Meets industry-standard voltage platforms
·Industry standard packaging saves on board space