CXT5551

Specifications SYMBOL UNITS Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 600 mA Power Dissipation PD 1.2 W Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ...

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SeekIC No. : 004319080 Detail

CXT5551: Specifications SYMBOL UNITS Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 600 mA Po...

floor Price/Ceiling Price

Part Number:
CXT5551
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/5

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Product Details

Description



Specifications

  SYMBOL   UNITS
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current IC 600 mA
Power Dissipation PD 1.2 W
Junction Temperature TJ,Tstg -65 to +150 °C
Thermal Resistance JA 104 °C/W



Description

The  CENTRAL SEMICONDUCTOR  CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface  mount  package,  designed  for  high voltage amplifier applications.


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