CXT3019

Specifications SYMBOL UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 1.0 mA Power Dissipation PD 1.5 W Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ...

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SeekIC No. : 004319076 Detail

CXT3019: Specifications SYMBOL UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 1.0 mA Pow...

floor Price/Ceiling Price

Part Number:
CXT3019
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/11

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Product Details

Description



Specifications

  SYMBOL   UNITS
Collector-Base Voltage VCBO 140 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 7.0 V
Collector Current IC 1.0 mA
Power Dissipation PD 1.5 W
Junction Temperature TJ,Tstg -65 to +150 °C
Thermal Resistance JA 104 °C/W



Description

The  CENTRAL SEMICONDUCTOR  CXT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications.


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